💡 Technology Spotlight: The Double Gunn Diode
Improvement in the structure of conventional Gunn diode by substituting some material regions for other materials with novel properties and operating conditions.
Problem Addressed by Claimed Invention
Gunn diodes exhibit bandwidth and frequency limitations related to the device length and doping concentration which precede the limitation imposed by the energy and intervalley relaxation time of the carriers. The present invention improves conventional Gunn diodes by enhancing bandwidth and ramp rates.
Benefits
o Larger bandwidth
o Higher frequency
o Higher ramp rate
• Retains the advantages of conventional Gunn diodes
Applications
• Detection methods
• Measurement
• Communication System
• Low noise application (FCMW)
Inventors are: Samir El-Ghazaly, Alan Mantooth, and Latarence Butts
https://lnkd.in/g_aXBSbt
Founder & CEO at East West Capital Limited
9moLooking forward Dan and David to the next stage of development once the Bolt SPAC merger is completed and of course meeting our new merger partners in due course. Best wishes to all involved.